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ipb60r080p7atma1 Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263 IPB60R080P7ATMA1
ipb60r080p7atma1 Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263 IPB60R080P7ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263 IPB60R080P7ATMA1

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263 IPB60R080P7ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB60R080P7ATMA1
Enrgtech Part No:
ET100197017
Warranty:
Manufacturer
$ 3.37 $ 3.37
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
37A
Maximum Drain Source Voltage Vds:
600V
Series:
CoolMOS
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
F93
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
129W
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
4.5 x 3.2 x 1.02mm
Length:
10.31mm
Height:
4.57mm
Automotive Standard:
No
pdf icon
A700000007498118.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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