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siss52dn-t1-ge3 Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3
siss52dn-t1-ge3 Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

Vishay SiSS52DN Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS52DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiSS52DN-T1-GE3
Enrgtech Part No:
ET100182565
Warranty:
Manufacturer
$ 1.09 $ 1.09
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
162A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PowerPAK 1212
Series:
SiSS52DN
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.95mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
57W
Typical Gate Charge Qg @ Vgs:
43.2nC
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Height:
0.83mm
Width:
3.4 mm
Length:
3.4mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007242076.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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