Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

Vishay SiSS32ADN Type N-Channel MOSFET, 63 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS32ADN-T1-GE3

Manufacturer:
Manufacturer Part No:
SiSS32ADN-T1-GE3
Enrgtech Part No:
ET100182555
Warranty:
Manufacturer
$ 0.79 $ 0.79
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Voltage Vds:
80V
Series:
SiSS32ADN
Package Type:
PowerPAK 1212
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
6.1mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
24nC
Maximum Power Dissipation Pd:
65.7W
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
3.4mm
Height:
0.83mm
Width:
3.4 mm
Automotive Standard:
No
pdf icon
A700000007241976.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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