Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263

Infineon HEXFET Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IRLZ34NSTRLPBF
Enrgtech Part No:
ET100179955
Warranty:
Manufacturer
$ 0.52 $ 0.52
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
60mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Typical Gate Charge Qg @ Vgs:
25nC
Maximum Power Dissipation Pd:
68W
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.3V
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
11.3 mm
Length:
10.67mm
Height:
4.83mm
Automotive Standard:
No
pdf icon
0900766b814a38dc.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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