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dmg4800lsd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13
dmg4800lsd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13
dmg4800lsd-13 DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 7.5 A, 30 V Enhancement, 8-Pin SOIC DMG4800LSD-13

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMG4800LSD-13
Enrgtech Part No:
ET100175726
Warranty:
Manufacturer
$ 0.44 $ 0.44
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Product Type:
Power MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
7.5A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
22mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
1.5W
Typical Gate Charge Qg @ Vgs:
8.56nC
Forward Voltage Vf:
800pA
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Standards/Approvals:
UL 94V-0, RoHS, AEC-Q101, J-STD-020, MIL-STD-202
Length:
4.95mm
Height:
1.5mm
Width:
3.95 mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b8104e581.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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