Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRFB4410ZPBF
Enrgtech Part No:
ET100171586
Warranty:
Manufacturer
$ 0.71 $ 0.71
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
97A
Maximum Drain Source Voltage Vds:
100V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
9mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
230W
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
83nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
4.82 mm
Standards/Approvals:
No
Height:
9.02mm
Length:
10.66mm
Automotive Standard:
No
pdf icon
0900766b80dcb1c5.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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