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zxmhc3f381n8tc DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC
zxmhc3f381n8tc DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC
zxmhc3f381n8tc DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement, 8-Pin SOIC ZXMHC3F381N8TC

Manufacturer:
DiodesZetex
Manufacturer Part No:
ZXMHC3F381N8TC
Enrgtech Part No:
ET100162989
Warranty:
Manufacturer
$ 1.28 $ 1.28
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Channel Type:
Type P, Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
4.98A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
80mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.82V
Typical Gate Charge Qg @ Vgs:
9nC
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
1.35W
Transistor Configuration:
Full Bridge
Maximum Operating Temperature:
-55°C
Standards/Approvals:
RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020
Width:
4 mm
Height:
1.5mm
Length:
5mm
Number of Elements per Chip:
4
Automotive Standard:
No
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0900766b8104e774.pdf(datasheets)
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0900766b8154d588.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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