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si2304dds-t1-ge3 Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
si2304dds-t1-ge3 Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3

Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3

Vishay Si2304DDS Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2304DDS-T1-GE3
Enrgtech Part No:
ET100158213
Warranty:
Manufacturer
$ 0.35 $ 0.35
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3.6A
Maximum Drain Source Voltage Vds:
30V
Series:
Si2304DDS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
75mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
4.5nC
Forward Voltage Vf:
0.8V
Maximum Power Dissipation Pd:
1.7W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
1.02mm
Length:
3.04mm
Width:
1.4 mm
Automotive Standard:
No
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0900766b81300c3f.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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