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si2337ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3
si2337ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2337DS-T1-GE3
Enrgtech Part No:
ET100158183
Warranty:
Manufacturer
$ 1.37 $ 1.37
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
2.2A
Maximum Drain Source Voltage Vds:
80V
Series:
TrenchFET
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.303Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
11nC
Minimum Operating Temperature:
-50°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
2.5W
Maximum Operating Temperature:
150°C
Standards/Approvals:
IEC 61249-2-21
Height:
1.02mm
Length:
3.04mm
Width:
1.4 mm
Automotive Standard:
No
pdf icon
0900766b81300c42.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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