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si1967dh-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3
si1967dh-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI1967DH-T1-GE3
Enrgtech Part No:
ET100158132
Warranty:
Manufacturer
$ 0.40 $ 0.40
Checking for live stock
Product Type:
Power MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
1.1A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SC-88
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
790mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
DF3
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
1.25W
Minimum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Height:
1mm
Length:
2.2mm
Standards/Approvals:
No
Width:
1.35 mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81300c3e.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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