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si4124dy-t1-ge3 Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3
si4124dy-t1-ge3 Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3
si4124dy-t1-ge3 Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

Vishay TrenchFET Type N-Channel Power MOSFET, 20.5 A, 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI4124DY-T1-GE3
Enrgtech Part No:
ET100158052
Warranty:
Manufacturer
$ 1.87 $ 1.87
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
20.5A
Maximum Drain Source Voltage Vds:
40V
Series:
TrenchFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.009Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
5.7W
Typical Gate Charge Qg @ Vgs:
21nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Width:
4 mm
Length:
5mm
Height:
1.55mm
Standards/Approvals:
IEC 61249-2-21
Automotive Standard:
No
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0900766b81300c99.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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