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si2367ds-t1-ge3 Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3
si2367ds-t1-ge3 Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2367DS-T1-GE3
Enrgtech Part No:
ET100157983
Warranty:
Manufacturer
$ 0.13 $ 0.13
Checking for live stock
Channel Type:
Type P
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
3.8A
Maximum Drain Source Voltage Vds:
20V
Series:
Si2367DS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.066Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.7W
Typical Gate Charge Qg @ Vgs:
9nC
Maximum Gate Source Voltage Vgs:
8 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Width:
1.4 mm
Height:
1.02mm
Length:
3.04mm
Standards/Approvals:
RoHS 2002/95/EC, IEC 61249-2-21
Automotive Standard:
No
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0900766b81300c47.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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