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si2366ds-t1-ge3 Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3
si2366ds-t1-ge3 Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3

Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3

Vishay Si2366DS Type N-Channel MOSFET, 5.8 A, 30 V Enhancement, 3-Pin SOT-23 SI2366DS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2366DS-T1-GE3
Enrgtech Part No:
ET100157976
Warranty:
Manufacturer
$ 0.45 $ 0.45
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
5.8A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-23
Series:
Si2366DS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=2339419&DisplayLogo=False
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
6.4nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.85V
Maximum Power Dissipation Pd:
2.1W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
3.04mm
Height:
1.02mm
Width:
1.4 mm
Automotive Standard:
No
pdf icon
0900766b81300c46.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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