si4564dy-t1-ge3 Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

For more information please check the datasheets.

Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI4564DY-T1-GE3

Enrgtech Part No:

ET100157692

Warranty:

Manufacturer

$ 1.09

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Channel Type:

Type N, Type P

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

Maximum Drain Source Voltage Vds:

40V

Package Type:

SOIC

Series:

TrenchFET

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

20mΩ

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

20.5nC

Maximum Power Dissipation Pd:

3.2W

0900766b81300ca8.pdf(datasheets)

0900766b81644fb0.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

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