Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

Manufacturer:
Manufacturer Part No:
IRFB4020PBF
Enrgtech Part No:
ET100151102
Warranty:
Manufacturer
$ 0.59 $ 0.59
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
200V
Package Type:
TO-220
Series:
HEXFET
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
18nC
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
100W
Maximum Operating Temperature:
175°C
Standards/Approvals:
No
Width:
4.82 mm
Height:
9.02mm
Length:
10.66mm
Automotive Standard:
No
pdf icon
0900766b80dcb1be.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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