Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

Manufacturer:
Manufacturer Part No:
IPD95R2K0P7ATMA1
Enrgtech Part No:
ET100144864
Warranty:
Manufacturer
$ 0.94 $ 0.94
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
950V
Package Type:
TO-252
Series:
CoolMOS P7
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
37W
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
6.73mm
Height:
2.41mm
Width:
6.22 mm
Automotive Standard:
No
pdf icon
A700000008175534.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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