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siha21n80ae-ge3 Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3
siha21n80ae-ge3 Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

Vishay E Type N-Channel MOSFET, 7.5 A, 800 V Enhancement, 3-Pin TO-220 SIHA21N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHA21N80AE-GE3
Enrgtech Part No:
ET100141077
Warranty:
Manufacturer
$ 3.98 $ 3.98
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7.5A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-220
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
CCS Contact Cleaning Strips
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
33W
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
9.7 mm
Length:
28.1mm
Height:
4.3mm
Automotive Standard:
No
pdf icon
A700000007242052.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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