Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3

Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8 SiDR170DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SiDR170DP-T1-RE3
Enrgtech Part No:
ET100140984
Warranty:
Manufacturer
$ 3.67 $ 3.67
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
95A
Maximum Drain Source Voltage Vds:
100V
Series:
SiDR170DP
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
4mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
125W
Typical Gate Charge Qg @ Vgs:
93nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Length:
5.9mm
Width:
4.9 mm
Height:
0.51mm
Automotive Standard:
No
pdf icon
A700000007241980.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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