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sihg186n60ef-ge3 Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3
sihg186n60ef-ge3 Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3

Vishay EF Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-247 SiHG186N60EF-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SiHG186N60EF-GE3
Enrgtech Part No:
ET100140919
Warranty:
Manufacturer
$ 1.65 $ 1.65
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.4A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-247
Series:
EF
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
168mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
21nC
Maximum Power Dissipation Pd:
156W
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Length:
33.91mm
Standards/Approvals:
No
Height:
4.58mm
Width:
15.29 mm
Automotive Standard:
No
pdf icon
A700000007241948.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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