Vishay E Type N-Channel MOSFET, 12 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3

Vishay E Type N-Channel MOSFET, 12 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3

Manufacturer:
Manufacturer Part No:
SIHH240N60E-T1-GE3
Enrgtech Part No:
ET100140882
Warranty:
Manufacturer
$ 2.36 $ 2.36
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
600V
Series:
E
Package Type:
PowerPAK 8 x 8
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
208mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
89W
Typical Gate Charge Qg @ Vgs:
15nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Width:
7.9 mm
Length:
7.9mm
Height:
0.9mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007241952.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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