Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 SIHP15N80AE-GE3

Vishay E Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220 SIHP15N80AE-GE3

Manufacturer:
Manufacturer Part No:
SIHP15N80AE-GE3
Enrgtech Part No:
ET100140877
Warranty:
Manufacturer
$ 1.75 $ 1.75
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-220
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
304mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
136W
Maximum Gate Source Voltage Vgs:
30 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
56nC
Maximum Operating Temperature:
150°C
Height:
4.24mm
Width:
9.96 mm
Standards/Approvals:
No
Length:
27.69mm
Automotive Standard:
No
pdf icon
A700000007242116.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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