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hs8ma2tcr1 ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1
hs8ma2tcr1 ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1

ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1

ROHM Dual 2 Type N, Type P-Channel MOSFET, 7 A, 30 V Enhancement, 9-Pin DFN HS8MA2TCR1

Manufacturer:
ROHM
Manufacturer Part No:
HS8MA2TCR1
Enrgtech Part No:
ET100138251
Warranty:
Manufacturer
$ 1.06 $ 1.06
Checking for live stock
Channel Type:
Type N, Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
7A
Maximum Drain Source Voltage Vds:
30V
Package Type:
DFN
Mount Type:
Surface
Pin Count:
9
Maximum Drain Source Resistance Rds:
0.08Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
4W
Forward Voltage Vf:
-1.2V
Typical Gate Charge Qg @ Vgs:
7.8nC
Minimum Operating Temperature:
-55°C
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
3.3 mm
Height:
0.8mm
Length:
3.3mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000007913619.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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