Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1

Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R900P7ATMA1

Manufacturer:
Manufacturer Part No:
IPN80R900P7ATMA1
Enrgtech Part No:
ET100124024
Warranty:
Manufacturer
$ 1.02 $ 1.02
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
800V
Series:
CoolMOS P7
Package Type:
SOT-223
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
900mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
15nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
7W
Forward Voltage Vf:
0.9V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Height:
1.8mm
Standards/Approvals:
No
Width:
3.7 mm
Length:
6.7mm
Automotive Standard:
No
pdf icon
A700000008175550.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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