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dmg6602svt-7 DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT
dmg6602svt-7 DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT
dmg6602svt-7 DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMG6602SVT-7
Enrgtech Part No:
ET100109758
Warranty:
Manufacturer
$ 0.32 $ 0.32
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Product Type:
Power MOSFET
Channel Type:
Type N, Type P
Maximum Continuous Drain Current Id:
3.4A
Maximum Drain Source Voltage Vds:
30V
Package Type:
TSOT
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
140mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.8V
Maximum Power Dissipation Pd:
1.27W
Typical Gate Charge Qg @ Vgs:
4nC
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Length:
2.9mm
Standards/Approvals:
J-STD-020, RoHS, MIL-STD-202, UL 94V-0, AEC-Q101
Height:
0.9mm
Width:
1.6 mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b814f3924.pdf(datasheets)
pdf icon
0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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