sij4108dp-t1-ge3 Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

For more information please check the datasheets.

Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIJ4108DP-T1-GE3

Enrgtech Part No:

ET100109359

Warranty:

Manufacturer

$ 2.26

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

56.7A

Maximum Drain Source Voltage Vds:

100V

Series:

SIJ

Package Type:

SO-8L

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.009Ω

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

69.4W

Typical Gate Charge Qg @ Vgs:

3010

A700000010766833.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIJ Type N-Channel MOSFET, 56.7 A, 100 V Enhancement, 7-Pin SO-8L SIJ4108DP-T1-GE3

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