Vishay SIJH Type N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3

Vishay SIJH Type N-Channel MOSFET, 277 A, 100 V Enhancement, 4-Pin 8x8L SIJH5100E-T1-GE3

Manufacturer:
Manufacturer Part No:
SIJH5100E-T1-GE3
Enrgtech Part No:
ET100109346
Warranty:
Manufacturer
$ 7.04 $ 7.04
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
277A
Maximum Drain Source Voltage Vds:
100V
Package Type:
8x8L
Series:
SIJH
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
0.00189Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
333W
Typical Gate Charge Qg @ Vgs:
128nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
7.9mm
Automotive Standard:
No
pdf icon
A700000010767087.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews