sir5110dp-t1-re3 Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

For more information please check the datasheets.

Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SIR5110DP-T1-RE3

Enrgtech Part No:

ET100109336

Warranty:

Manufacturer

$ 2.67

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

47.6A

Maximum Drain Source Voltage Vds:

100V

Package Type:

SO-8

Series:

SiR

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0125Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

±20 V

A700000010766863.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

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