sir5112dp-t1-re3 Vishay SiR Type N-Channel MOSFET, 42.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3

Vishay SiR Type N-Channel MOSFET, 42.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3

For more information please check the datasheets.

Vishay SiR Type N-Channel MOSFET, 42.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SIR5112DP-T1-RE3

Enrgtech Part No:

ET100109330

Warranty:

Manufacturer

$ 2.59

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

42.6A

Maximum Drain Source Voltage Vds:

100V

Series:

SiR

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0149Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

56.8W

A700000010766887.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SiR Type N-Channel MOSFET, 42.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3

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