Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

Vishay SiR Type P-Channel MOSFET, 105 A, 20 V Enhancement, 8-Pin SO-8 SIR5211DP-T1-GE3

Manufacturer:
Manufacturer Part No:
SIR5211DP-T1-GE3
Enrgtech Part No:
ET100109327
Warranty:
Manufacturer
$ 1.53 $ 1.53
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
105A
Maximum Drain Source Voltage Vds:
20V
Series:
SiR
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.0062Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
56.8W
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
158nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
5.15mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000010767105.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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