Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

Vishay SiR Type P-Channel MOSFET, 90.9 A, 60 V Enhancement, 8-Pin SO-8 SIR5607DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR5607DP-T1-RE3
Enrgtech Part No:
ET100109317
Warranty:
Manufacturer
$ 3.45 $ 3.45
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
90.9A
Maximum Drain Source Voltage Vds:
60V
Package Type:
SO-8
Series:
SiR
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.007Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
104W
Typical Gate Charge Qg @ Vgs:
112nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
5.15mm
Automotive Standard:
No
pdf icon
A700000010767113.pdf(datasheets)
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