sir5808dp-t1-re3 Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

For more information please check the datasheets.

Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SIR5808DP-T1-RE3

Enrgtech Part No:

ET100109312

Warranty:

Manufacturer

$ 2.24

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

66.8A

Maximum Drain Source Voltage Vds:

80V

Package Type:

SO-8

Series:

SiR

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.00735Ω

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

±20 V

Maximum Power Dissipation Pd:

65.7W

A700000010766843.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

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