Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

For more information please check the datasheets.

Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIRS5100DP-T1-GE3

Enrgtech Part No:

ET100109255

Warranty:

Manufacturer

$ 4.39

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

225A

Maximum Drain Source Voltage Vds:

100V

Series:

SIRS

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0025Ω

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

102nC

Maximum Power Dissipation Pd:

240W

A700000010766953.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

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