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sish107dn-t1-ge3 Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3
sish107dn-t1-ge3 Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SISH107DN-T1-GE3
Enrgtech Part No:
ET100109254
Warranty:
Manufacturer
$ 0.74 $ 0.74
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
34.4A
Maximum Drain Source Voltage Vds:
30V
Package Type:
1212-8
Series:
SISH
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.014Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
26.5W
Typical Gate Charge Qg @ Vgs:
41nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
3.3mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000010766851.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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