Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

Manufacturer:
Manufacturer Part No:
SISS4409DN-T1-GE3
Enrgtech Part No:
ET100109232
Warranty:
Manufacturer
$ 0.61 $ 0.61
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
59.2A
Maximum Drain Source Voltage Vds:
40V
Package Type:
1212-8S
Series:
SISS
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.009Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
126nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
56.8W
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Operating Temperature:
150°C
Length:
3.3mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000010767153.pdf(datasheets)
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