siss5112dn-t1-ge3 Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

For more information please check the datasheets.

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS5112DN-T1-GE3

Enrgtech Part No:

ET100109214

Warranty:

Manufacturer

$ 2.16

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

40.7A

Maximum Drain Source Voltage Vds:

100V

Package Type:

1212-8S

Series:

SISS

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0149Ω

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

52W

Maximum Gate Source Voltage Vgs:

±20 V

A700000010766917.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SISS Type N-Channel MOSFET, 40.7 A, 100 V Enhancement, 8-Pin 1212-8S SISS5112DN-T1-GE3

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