Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

For more information please check the datasheets.

Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS52DN-T1-UE3

Enrgtech Part No:

ET100109205

Warranty:

Manufacturer

$ 1.22

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

162A

Maximum Drain Source Voltage Vds:

30V

Series:

SISS

Package Type:

1212-8S

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0012Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

0.8 nC @ 10 V

A700000010766977.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SISS Type N-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin 1212-8S SISS52DN-T1-UE3

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