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sihk155n60e-t1-ge3 Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK155N60E-T1-GE3
Enrgtech Part No:
ET100108761
Warranty:
Manufacturer
$ 5.87 $ 5.87
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
600V
Package Type:
PowerPAK 10 x 12
Series:
SIHK
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.158Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
156W
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Typical Gate Charge Qg @ Vgs:
36nC
Maximum Operating Temperature:
150°C
Length:
9.9mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000010766617.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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