Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

Vishay SIHR Type N-Channel MOSFET, 51 A, 600 V Enhancement, 8-Pin 8x8LR SIHR080N60E-T1-GE3

Manufacturer:
Manufacturer Part No:
SIHR080N60E-T1-GE3
Enrgtech Part No:
ET100108748
Warranty:
Manufacturer
$ 7.53 $ 7.53
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6 Pin
Maximum Drain Source Voltage Vds:
600V
Series:
SIHR
Package Type:
8x8LR
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.084Ω
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
8.38mm
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
500W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
8mm
Automotive Standard:
No
pdf icon
A700000010767065.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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