Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

For more information please check the datasheets.

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI1480BDH-T1-GE3

Enrgtech Part No:

ET100108624

Warranty:

Manufacturer

$ 0.42

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

1.9A

Maximum Drain Source Voltage Vds:

100V

Package Type:

SOT-363

Series:

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.212Ω

Channel Mode:

Enhancement

Typical Gate Charge Qg @ Vgs:

6nC

Minimum Operating Temperature:

-55°C

A700000010766945.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SI Type N-Channel MOSFET, 1.9 A, 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3

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