si4190bdy-t1-ge3 Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

For more information please check the datasheets.

Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI4190BDY-T1-GE3

Enrgtech Part No:

ET100108610

Warranty:

Manufacturer

$ 2.96

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

17A

Maximum Drain Source Voltage Vds:

100V

Series:

Package Type:

SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.093Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Power Dissipation Pd:

8.4W

A700000010766883.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

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