Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR632DP-T1-RE3
Enrgtech Part No:
ET100105757
Warranty:
Manufacturer
$ 1.22 $ 1.22
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
29A
Maximum Drain Source Voltage Vds:
150V
Series:
SiR632DP
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
14MHz
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.2V
Maximum Power Dissipation Pd:
69.5W
Typical Gate Charge Qg @ Vgs:
Ladder
Maximum Operating Temperature:
150°C
Height:
1.12mm
Length:
6.25mm
Standards/Approvals:
No
Width:
5.26 mm
Automotive Standard:
No
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0900766b815a7418.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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