Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z34NPBF

Infineon HEXFET Type P-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z34NPBF

Manufacturer:
Manufacturer Part No:
IRF9Z34NPBF
Enrgtech Part No:
ET100057539
Warranty:
Manufacturer
$ 1.15 $ 1.15
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
100mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
35nC
Maximum Power Dissipation Pd:
68W
Forward Voltage Vf:
-1.6V
Maximum Operating Temperature:
175°C
Length:
10.54mm
Height:
8.77mm
Standards/Approvals:
No
Width:
4.69 mm
Automotive Standard:
No
Distrelec Product Id:
30341313
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0900766b80791196.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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