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irf9z24npbf Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z24NPBF
irf9z24npbf Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z24NPBF
irf9z24npbf Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z24NPBF

Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z24NPBF

Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220 IRF9Z24NPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF9Z24NPBF
Enrgtech Part No:
ET100056990
Warranty:
Manufacturer
$ 0.56 $ 0.56
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
55V
Series:
HEXFET
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
175mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
19nC
Maximum Power Dissipation Pd:
45W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
-1.6V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Length:
10.54mm
Height:
8.77mm
Standards/Approvals:
No
Width:
4.69 mm
Automotive Standard:
No
Distrelec Product Id:
30341312
pdf icon
0900766b8079172c.pdf(datasheets)
pdf icon
0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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