Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8 SIR5802DP-T1-RE3

Vishay N-Channel 80 V Type N-Channel MOSFET, 137.5 A, 80 V, 8-Pin SO-8 SIR5802DP-T1-RE3

Manufacturer:
Manufacturer Part No:
SIR5802DP-T1-RE3
Enrgtech Part No:
ET100056257
Warranty:
Manufacturer
$ 2.82 $ 2.82
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
137.5A
Maximum Drain Source Voltage Vds:
80V
Series:
N-Channel 80 V
Package Type:
SO-8
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
4mΩ
Typical Gate Charge Qg @ Vgs:
60nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
104W
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Length:
6.25mm
Height:
5.26mm
Width:
1.12 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007970235.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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