Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

Vishay E Type N-Channel Power MOSFET, 30 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

Manufacturer:
Manufacturer Part No:
SIHA100N60E-GE3
Enrgtech Part No:
ET100046861
Warranty:
Manufacturer
$ 4.52 $ 4.52
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Channel Type:
Type N
Product Type:
Power MOSFET
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
600V
Package Type:
TO-220
Series:
E
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.1Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
35W
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Typical Gate Charge Qg @ Vgs:
3 x 1 x 2mm
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
4.7 mm
Height:
15.3mm
Length:
10.3mm
Automotive Standard:
No
pdf icon
0900766b8170a28d.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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