Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3

Vishay SiHG21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247 SIHG21N80AE-GE3

Manufacturer:
Manufacturer Part No:
SIHG21N80AE-GE3
Enrgtech Part No:
ET100046843
Warranty:
Manufacturer
$ 5.76 $ 5.76
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
17.4A
Maximum Drain Source Voltage Vds:
800V
Package Type:
TO-247
Series:
SiHG21N80AE
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
235mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
32W
Maximum Operating Temperature:
150°C
Width:
5.31 mm
Standards/Approvals:
No
Length:
15.87mm
Height:
20.82mm
Distrelec Product Id:
304-38-848
Automotive Standard:
No
pdf icon
0900766b8170a299.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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