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sihd2n80ae-ge3 Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
sihd2n80ae-ge3 Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

Vishay SiHD2N80AE Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHD2N80AE-GE3
Enrgtech Part No:
ET100046834
Warranty:
Manufacturer
$ 0.95 $ 0.95
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.9A
Maximum Drain Source Voltage Vds:
800V
Series:
SiHD2N80AE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2.9Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
-25 °C
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
62.5W
Maximum Gate Source Voltage Vgs:
30 V
Maximum Operating Temperature:
150°C
Width:
6.22 mm
Height:
2.25mm
Standards/Approvals:
No
Length:
6.73mm
Distrelec Product Id:
304-38-847
Automotive Standard:
No
pdf icon
0900766b8170a295.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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