Vishay SiSHA14DN Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3

Vishay SiSHA14DN Type N-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SiSHA14DN-T1-GE3

Manufacturer:
Manufacturer Part No:
SiSHA14DN-T1-GE3
Enrgtech Part No:
ET100046829
Warranty:
Manufacturer
$ 0.66 $ 0.66
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
20A
Maximum Drain Source Voltage Vds:
30V
Package Type:
PowerPAK 1212
Series:
SiSHA14DN
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
8mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.1V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
26.5W
Typical Gate Charge Qg @ Vgs:
19.4nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
3.3mm
Height:
0.93mm
Width:
3.3 mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b8170a2c5.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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