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irf7103trpbf Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF
irf7103trpbf Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF
irf7103trpbf Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF

Infineon Isolated HEXFET 2 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SOIC IRF7103TRPBF

Manufacturer:
Infineon
Manufacturer Part No:
IRF7103TRPBF
Enrgtech Part No:
ET100046773
Warranty:
Manufacturer
$ 0.55 $ 0.55
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
3A
Maximum Drain Source Voltage Vds:
50V
Series:
HEXFET
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
200mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
12nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
2W
Transistor Configuration:
Isolated
Maximum Operating Temperature:
150°C
Height:
1.5mm
Width:
4 mm
Length:
5mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
Distrelec Product Id:
304-44-449
pdf icon
0900766b813418d0.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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