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spb80p06pgatma1 Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1
spb80p06pgatma1 Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1
spb80p06pgatma1 Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1

Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1

Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1

Manufacturer:
Infineon
Manufacturer Part No:
SPB80P06PGATMA1
Enrgtech Part No:
ET100038300
Warranty:
Manufacturer
$ 4.37 $ 4.37
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Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
80A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-263
Series:
499Ω
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
TO-236AB
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
-1.4mV/K
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
6.4mV/K
Maximum Operating Temperature:
175°C
Length:
10.31mm
Standards/Approvals:
No
Width:
4.5 x 3.2 x 1.02mm
Height:
4.57mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b810743f5.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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